收藏本站
NTB23N03R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 1)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V(br) DSS
25
-
28
-
-
-
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 150 ° C)
-
-
-
-
1.0
10
Gate-Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
I GSS
-
-
± 100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
-
1.8
-
2.0
-
Vdc
mV/ ° C
Static Drain-to-Source On-Resistance (Note 1)
R DS(on)
m W
(V GS = 4.5 Vdc, I D = 6 Adc)
(V GS = 10 Vdc, I D = 6 Adc)
Forward Transconductance (Note 1)
(V DS = 10 Vdc, I D = 6 Adc)
g FS
-
-
-
50.3
32.3
14
60
45
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
-
225
-
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 Vdc, V GS = 0 V, f = 1 MHz)
C oss
C rss
-
-
108
48
-
-
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t d(on)
-
2.0
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
(V GS = 10 Vdc, V DD = 10 Vdc,
I D = 6 Adc, R G = 3 W )
t r
t d(off)
t f
-
-
-
14.9
9.9
2.0
-
-
-
Gate Charge
(V GS = 4.5 Vdc, I D = 6 Adc,
V DS = 10 Vdc) (Note 1)
Q T
Q 1
Q 2
-
-
-
3.76
1.7
1.6
-
-
-
nC
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 6 Adc, V GS = 0 Vdc) (Note 1)
(I S = 6 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 6 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 1)
V SD
t rr
t a
t b
Q RR
-
-
-
-
-
-
0.87
0.74
8.7
5.2
3.5
0.003
1.2
-
-
-
-
-
Vdc
ns
m C
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTB23N03R
NTB23N03RG
NTB23N03RT4
NTB23N03RT4G
Device
Package
D 2 PAK
D 2 PAK
(Pb-Free)
D 2 PAK
D 2 PAK
Shipping ?
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTB25P06G MOSFET P-CH 60V 27.5A D2PAK
NTB30N06T4 MOSFET N-CH 60V 27A D2PAK
NTB30N20T4G MOSFET N-CH 200V 30A D2PAK
NTB35N15T4 MOSFET N-CH 150V 37A D2PAK
NTB52N10T4G MOSFET N-CH 100V 52A D2PAK
NTB5405NG MOSFET N-CH 40V 116A D2PAK
NTB5411NT4G MOSFET N-CH 60V 80A D2PAK
NTB5412NT4G MOSFET N-CH 60V 60A D2PAK
相关代理商/技术参数
NTB-2401 制造商:Quest Technology International Inc 功能描述:
NTB-2402 制造商:Quest Technology International Inc 功能描述:
NTB-2403 制造商:Quest Technology International Inc 功能描述:
NTB2542AS 制造商:IKO NIPPON THOMPSON 功能描述:AXL NDL RLR 25MM
NTB25P06 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB25P06G 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB25P06T4 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB25P06T4G 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube